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CeNS Colloquium

Place: Kleiner Physik-Hörsaal
Date: 11.04.2014, Time: 15:30h

Epitaxial Graphene: Surprises in Electron Transport and Nice Devices

Prof. Heiko Weber
Friedrich-Alexander-Universität Erlangen-Nürnberg

We investigate charge transport in high-quality epitaxial graphene on SiC (0001). In the first part of my talk, I will present charge transport in large-area graphene. Whereas the magnetoresistance in monolayer graphene is fully understood [1], bilayer graphene displays a strong linear magnetoresistance that origins from stacking fault networks [2]. In the second part of my talk, I will present how graphene can be chemically doped by intercalation such that n-type and p-type graphene are interconnected on the same chip. This can be used for unconventional devices, allowing for digital electronics [3] that operates up to 400°C, THz polarizers, ultra-low capacitance diodes etc. Finally, single-molecule junctions using graphene electrode pairs will be presented.


[1] Jobst J, Waldmann D, Gornyi IV, Mirlin AD, Weber HB. Electron-Electron Interaction in the Magnetoresistance of Graphene. Phys Rev Lett 2012, 108(10).
[2] Butz B, Dolle C, Niekiel F, Weber K, Waldmann D, Weber HB, et al. Dislocations in bilayer graphene. Nature 2014, 505(7484): 533-+.
[3] Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Reshanov S, et al. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications 2012, 3.