Place: Kleiner Physik-Hörsaal
Date: 11.04.2014, Time: 15:30h
Epitaxial Graphene: Surprises in Electron Transport and Nice Devices
Prof. Heiko Weber
We investigate charge transport in high-quality epitaxial graphene on SiC (0001). In the first part of my talk, I will present charge transport in large-area graphene. Whereas the magnetoresistance in monolayer graphene is fully understood , bilayer graphene displays a strong linear magnetoresistance that origins from stacking fault networks . In the second part of my talk, I will present how graphene can be chemically doped by intercalation such that n-type and p-type graphene are interconnected on the same chip. This can be used for unconventional devices, allowing for digital electronics  that operates up to 400°C, THz polarizers, ultra-low capacitance diodes etc. Finally, single-molecule junctions using graphene electrode pairs will be presented.
 Jobst J, Waldmann D, Gornyi IV, Mirlin AD, Weber HB. Electron-Electron Interaction in the Magnetoresistance of Graphene. Phys Rev Lett 2012, 108(10).
 Butz B, Dolle C, Niekiel F, Weber K, Waldmann D, Weber HB, et al. Dislocations in bilayer graphene. Nature 2014, 505(7484): 533-+.
 Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Reshanov S, et al. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications 2012, 3.